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DP10F1200102400

$94.50
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IGBT - PIM

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DatasheetDP10F1200102400

11.4A/200V/1U

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Todos nuestros productos cuentan con una garantía contra defectos de fabricación.

Features

  • N-Channel MOSFET
  • RDS(ON) (Max 0.18 Ohms)@Vgs = 10 V
  • Gate Charge (Typical 45nC)
  • Improved dv/dt Capability, High Ruggedness
  • 100 % Avalanche tested
  • Maximun Juntion Temperature range (150C)

Aplications

  • Semiconductors High Power Equipment Repair

  • Brand
  • MPN
    DP10F1200102400

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