• RJP30H2A

RJP30H2A

$3.94
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DatasheetRJP30H2A

35A/360V/1U

No Identificado

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Tus compras son seguras

  Delivery policy

Envíos gratuitos en compras mayores a 160USD sin iva. La entrega depende de la disponibilidad.

  Return policy

Todos nuestros productos cuentan con una garantía contra defectos de fabricación.

Features

  • Silicon N Channel IGBT
  • Trench gate and thin wafer technology (G6H-II series)
  • Low collector to emitter saturation voltage : VCE(sat) = 1.4 V typ
  • High speed switching : tf = 100 ns typ, tr = 180 ns typ
  • Low leak current : ICES = 1 uA max

Aplications

  • Semiconductors High Power Equipment Repair

  • MPN
    RJP30H2A

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