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MTW8N60E

$10.50
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DatasheetMTW8N60E

8A/600V/1U

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Features

  • Power MOSFET
  • Robust High Voltage Termination
  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Dicrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridege Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Isolated Mounting Hole Reduces Mounting Hardware

Aplications

  • Semiconductors High Power Equipment Repair

  • MPN
    MTW8N60E

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