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MP6801

$15.75
Tax included

MODULOS IGBT DE CANAL N

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DatasheetMP6801

10A/60V/6U

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Todos nuestros productos cuentan con una garantía contra defectos de fabricación.

Features

  • SILICON N & P CHANNEL MOS FET
  • 4 Volt Gate Drive
  • Package with Heat Sink Isolated to Lead (SIP 12 pin)
  • High Drain Power Dissipation.
  • PT = 40 W @ Tc = 25 C (6 Device Operation)
  • Low Drain-Source ON Resistance :
  • RDS (ON) = 55mOhms (Typ) (N-ch)
  • 90mOhms (Typ) (P-ch)
  • Low Leakage Current :
  • IGSS = +- 10uA (Max) @ VDS = +- 16V
  • IDSS = 100uA (Max) @ VDS = 60V
  • Enhancement Mode :
  • Vth = 0.8 - 2.0V @ ID = 1mA

Aplications

  • Semiconductors High Power Equipment Repair

  • MPN
    MP6801

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