• RJP63K2

RJP63K2

$3.94
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DatasheetRJP63K2

35A/630V/1U

No Identificado

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Todos nuestros productos cuentan con una garantía contra defectos de fabricación.

Features

  • Silicon N Channel IGBT, High Speed Power Switching
  • Trench gate and thin wafer technology (G6H-II series )
  • Low collector to emitter saturation voltage : VCE(sat) = 1.9 V typ
  • High speed switching . Tr = 60 ns typ, tf = 200 ns typ
  • Low leak current : ICES = 1 uA max
  • Isolated package TO-220FL

Aplications

  • Semiconductors High Power Equipment Repair

  • MPN
    RJP63K2

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