• 2SK1119

2SK1119

$7.89
Tax included

TRANSISTORES N MOS

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Datasheet2SK1119

4A/1000V/1U

No Identificado

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Features

  • Silicon N Channel MOS FET
  • Low drain-source ON resistance : RDS (ON)= 3.0 Ohms (typ.)
  • High forward transfer admittance : Yfs = 2.0 S (typ.)
  • Low leakage current : IDSS= 300uA (max) (VDS=800 V)
  • Enhancement mode : Vth = 1.5 to 3.5 V (VDS=10 V, ID= 1 mA)

Aplications

  • Semiconductors High Power Equipment Repair

  • MPN
    2SK1119

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