• MTB3N120E/D

MTB3N120E/D

$5.25
Tax included

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DatasheetMTB3N120E/D

3A/1200V/1U

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Features

  • TMOS POWER FET
  • Avalanche Energy Capability Specified at
  • Elevated Temperature
  • Low Stored Gate Charge for Efficient Switching
  • Internal Source-to-Drain Diode Designed to
  • Replace External Zener Transient Suppresor
  • Absorbs High Energy in the Avalanche Mode
  • Source -to Drain Diode Recovery time Compatible
  • to Discrete Fast Recovery Diode
  • Very Wide input Voltage Range; Off-line Flybacks
  • Switching Power Supply

Aplications

  • Semiconductors High Power Equipment Repair

  • MPN
    MTB3N120E/D

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