• MTE53N50E

MTE53N50E

$44.63
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DatasheetMTE53N50E

53A/500V/1U

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Features

  • TMOS POWER FET
  • 2500 V RMS Isolated Isotop Package
  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time
  • Compatible to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • Very Low Internal Parasitic Inductance
  • IDSS and VDS(on) Specified at Elevated Temperature
  • U.L. Recognized, File #E69369

Aplications

  • Semiconductors High Power Equipment Repair

  • MPN
    MTE53N50E

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