• IRG4BC30FDP

IRG4BC30FDP

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DatasheetIRG4BC30FDP

17A/600V/1U

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Features

  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • Fast Optimized for medium operating
  • frequencies ( 1 - 5 kHz in hard switching, >20
  • kHz in resonant mode)
  • Generation 4 IGBT design provides tighter
  • parameter distribution and higher efficiency than Generation 3
  • IGBT co-package with HEXFRED ultrafast, ultra
  • -soft, recovery anti-parallel diodes for use in
  • bridge configurations
  • Industry standar TO-220AB package
  • Lead-Free

Aplications

  • Semiconductors High Power Equipment Repair

  • Brand
  • MPN
    IRG4BC30FDP

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