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RJH60F7

$13.13
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DatasheetRJH60F7

90A/600V/1U

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Todos nuestros productos cuentan con una garantía contra defectos de fabricación.

Features

  • Silicon N Channel IGBT
  • Low collector to emitter saturation voltage
  • VCE(sat) = 1.35 V typ. (at Ic = 50 A, Vge = 15 V, Ta = 25 C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High speed switching
  • tf=74ns typ. (at Ic_30 A, VCE = 400 V, VGE=15 V, Rg = 5 Ohms, Ta = 25C, inductive load

Aplications

  • Semiconductors High Power Equipment Repair

  • Brand
  • MPN
    RJH60F7

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