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2SK1058

$13.13
IVA incluido

TRANSISTORES N MOS

Última actualización

Datasheet2SK1058

7A/160V/1U

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Features

  • Silicon N Channel MOS FET
  • Good frequency characteristic
  • High speed switching
  • Wide area of safe operation
  • Enhancement-mode
  • Good complementary characteristic
  • Equipped with gate protection diodes
  • Suitable foe audio power amplifier
  • Low drain-source ON resistance : RDS (ON)= 3.0 Ohms (typ.)
  • High forward transfer admittance : Yfs = 2.0 S (typ.)
  • Low leakage current : IDSS= 300uA (max) (VDS=800 V)
  • Enhancement mode : Vth = 1.5 to 3.5 V (VDS=10 V, ID

Aplications

  • Applications
  • Low frequency power amplifier
  • Complementary pair with 2SJ160, 2SJ161 and 2SJ162

  • Nº Pieza fabricante (NPM)
    2SK1058

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