• MIG10J503

MIG10J503

$39.38
IVA incluido

IGBT - IPM

Última actualización

DatasheetMIG10J503

10A/500V/6U

No Identificado

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Todos nuestros productos cuentan con una garantía contra defectos de fabricación.

Features

  • INTELLIGENT POWER MODULE
  • The 4th generation trench gate thin wafer
  • NPT IGBT is adopted
  • FRD is built in
  • The level shift circuit by high-voltage IC
  • built in
  • The simplification of a high side driver power
  • supply is possible by the bootstrap system
  • Short Circuit Protection, Over Temperature
  • protection and the Power Supply Under Voltage
  • Protection function are built in
  • Short Circuit protection and Over Temperature
  • Protection state are outputted
  • The lower arm emitter terminal has been
  • independent by each phase for the purpose of
  • the current detection at the time of vector control
  • Low thermal resistance by adoption of original
  • high thermal conduction resin
  • Since this product is MOS structure, it should be
  • careful of static electricity in the case of handling

Aplications

  • Semiconductors High Power Equipment Repair

  • Marca
  • Nº Pieza fabricante (NPM)
    MIG10J503

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